smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features for general af applications. high collector current. high current gain. low collector-emitter saturation voltage. www.kexin.com.cn npn silicon af transistors kc817(BC817) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current (dc) i c 800 ma power dissipation p d 310 mw junction temperature t j 150 storage temperature t stg -65to+150 marking no. b c817-16 b c817-25 b c817-40 hfe 100 250 160 400 250 630 electrical characteristics ta = 25 symbol testconditons min typ max unit v cbo i c =10 a,v be =0 50 v v ceo i c =10ma,i b =0 45 v v ebo i e =10 a, i c =0 5v collector cutoff current i ces v cb =25v,v be = 0 100 na i ebo v eb =4v,i c = 0 100 na i c = 100 ma, v ce = 1 v 100 630 i c = 300 ma, v ce =1v 60 v ce(sat) i c = 500 ma, i b =50ma 0.7 v v be(on) v ce =1v,i c =300ma 1.2 v output capacitance c ob v cb =10v,f=1mhz 12 pf f t i c =10ma,v ce = 5 v, f = 50 mhz 100 mhz * pulsed: pw 350 s, duty cycle 2% base emitter on voltage transition frequency collector saturation voltage * parameter emitter cutoff current emitter-to-base breakdown voltage h fe collector-to-base breakdown voltage collector-to-emitter breakdown voltage dc current gain * marking 6a 6b 6c tiger electronic co.,ltd
|
